Semiconductor memory device

ABSTRACT

A semiconductor memory device includes a memory cell array having memory strings that include memory cells and first and second selection transistors. During a read operation, a controller applies a first voltage higher than ground to a source line, and a second voltage to a first and second selection gate lines that are connected to a selected memory string. The second voltage is also applied to the first selection gate lines connected to non-selected memory strings during a first period of the read operation. A third voltage higher than ground and lower than the second voltage is applied to the first selection gate lines connected to non-selected memory strings during a second period of the read operation subsequent to the first period.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/498,029, filed on Apr. 26, 2017, which is a continuation of U.S.patent application Ser. No. 15/231,715, filed on Aug. 8, 2016, now U.S.Pat. No. 9,666,296, granted on May 30, 2017, which is based upon andclaims the benefit of priority from Japanese Patent Application No.2016-040290, filed on Mar. 2, 2016, the entire contents of each of whichare incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor memorydevice.

BACKGROUND

A NAND type flash memory is known as a nonvolatile semiconductor memorydevice.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a NAND type flash memory according to afirst embodiment.

FIG. 2 is a block diagram of a memory cell array

FIG. 3 is a circuit diagram of a block which is included in the memorycell array.

FIG. 4 is a cross-sectional view of a region of the block.

FIG. 5 is a circuit diagram illustrating dummy cell transistors.

FIG. 6 is a block diagram of a sense amplification unit and a datacache.

FIG. 7 is a circuit diagram of the sense amplification unit.

FIG. 8 is a circuit diagram of a row decoder.

FIG. 9 is a schematic diagram illustrating a block selection operation.

FIG. 10 is a timing chart illustrating a read operation of the NAND typeflash memory according to the first embodiment.

FIG. 11 is a timing chart illustrating a read operation according to acomparative example.

FIGS. 12A and 12B are schematic energy band diagrams illustrating readdisturbance.

FIG. 13 is a timing chart illustrating a read operation of the NAND typeflash memory according to the first embodiment.

FIG. 14 is a timing chart illustrating a read operation according to thecomparative example.

DETAILED DESCRIPTION

In general, according to one embodiment, semiconductor memory device,comprises a memory cell array having a plurality of memory stringsdisposed in columns, each memory string having a first selectiontransistor, a second selection transistor, and a plurality of memorycells connected in series between the first and second selectiontransistors. A plurality of word lines are each connected across memorystrings in adjacent columns to a row of memory cells is provided. Aplurality of bit lines that are each connected to first selecttransistors in a column of memory strings is provided. A plurality offirst selection gate lines that are each connected across memory stringsin adjacent columns to gates of first selection transistors is provided.A plurality of second selection gate lines that are each connectedacross memory strings in adjacent columns to gates of second selectiontransistors is provided. A source line that is connected to each of thesecond select transistors in the memory cell array is provided as is acontroller configured to, during a read operation: apply a first voltageto the source line, the first voltage being higher than a groundvoltage; apply a second voltage to first and second selection gate linesconnected to the selected memory strings, the second voltage beingsufficient to turn on the first and second selection transistors; applythe second voltage to each first selection gate lines connected to anynon-selected memory strings in plurality of memory strings during afirst period of the read operation; and apply a third voltage to eachfirst selection gate lines connected to the non-selected memory stringsduring a second period of the read operation after the first period, thethird voltage being higher than the ground voltage and lower than thesecond voltage.

Hereinafter, exemplary embodiments will be described with reference tothe accompanying drawings.

A semiconductor memory device according to the present disclosure is anonvolatile semiconductor memory device to which data can be written andrewritten. In the following description, a NAND type flash memory willbe discussed as an example of a semiconductor memory device.

1. Configuration of NAND Type Flash Memory

FIG. 1 is a block diagram of a NAND type flash memory 10 according tothe first embodiment. The NAND type flash memory 10 includes a memorycell array 11, a row decoder 12, a column decoder 13, a senseamplification unit 14, a data cache (data latch circuit) 15, a coredriver 16, a voltage generation circuit 17, an input and output circuit18, an address register 19, a controller 20, and a status register 21.

The memory cell array 11 includes multiple blocks, and each of themultiple blocks includes multiple memory cell transistors (in someinstances these may be simply referred to as “memory cells”). The memorycell transistor includes an EEPROM cell to which data can beelectrically rewritten. Multiple bit lines, multiple word lines, and asource line are arranged in the memory cell array 11 so as to control avoltage which is applied to the memory cell transistors. The memory cellarray 11 will be described in detail below.

The row decoder 12 receives a block address signal and a row addresssignal from the address register 19, and selects one word line in acorresponding block based on these address signals. The column decoder13 receives a column address signal from the address register 19, andselects one bit line based on the column address signal.

When data is read, the sense amplification unit 14 senses and amplifiesdata which is read from the memory cells on the selected bit line. Inaddition, the sense amplification unit 14 transmits write data to thebit line, when data is written. Reading and writing data from and to thememory cell array 11 are performed on multiple memory cells as a unit,and this unit is considered a page.

The data cache (buffer) 15 stores data as a page unit. When data isread, the data cache 15 temporarily stores the data which is transmittedfrom the sense amplification unit 14 on a page basis, and seriallytransmits the data to the input and output circuit 18. In addition, whendata is written, the data cache 15 temporarily stores the data which isserially transmitted from the input and output circuit 18, and transmitsthe data to the sense amplification unit 14 on a page basis.

The core driver 16 supplies the row decoder 12, the sense amplificationunit 14, and a source line driver (not illustrated) with voltagesnecessary for writing, reading, and erasing of data. The voltages whichare supplied by the core driver 16 are applied to the memory cells(specifically, word lines, selection gate lines, bit lines, and sourcelines) through the row decoder 12, the sense amplification unit 14, andthe source line driver.

The voltage generation circuit 17 generates internal voltages (forexample, boosted voltages which are generated by raising a power supplyvoltage) necessary for each operation, and supplies the core driver 16with the internal voltages.

The controller 20 controls the operations of the NAND type flash memory10. The controller 20 receives various external control signals, such asa chip enable signal CEn, an address latch enable signal ALE, a commandlatch enable signal CLE, a write enable signal WEn and a read enablesignal REn from an external host device (not illustrated). Here, “n”attached to the signal names indicates active low—that is, the signalhas a logical “low” value when it is intended to indicate thecorresponding aspect is active/enabled.

The controller 20 identifies an address Add and a command CMD which aresupplied from an input and output terminal I/O, based on the externalcontrol signals. In addition, the controller 20 transmits the addressAdd to the column decoder 13 and the row decoder 12 through the addressregister 19. In addition, the controller 20 decodes the command CMD. Thecontroller 20 performs each sequence of reading, writing, and erasing ofdata, according to the external control signal and the command CMD. Inaddition, the controller 20 outputs a ready/busy signal R/Bn to notifythe host device of an operation state of the NAND type flash memory 10.The host device can thus know a present state of the NAND type flashmemory 10 by receiving the ready/busy signal R/Bn.

The input and output circuit 18 transmits and receives data (includingthe command CMD, the address Add, and the data) to and from the hostdevice through a NAND bus.

The status register 21 temporarily stores management data which is readfrom a ROM fuse of the memory cell array 11, when power is turned on,for example. In addition, the status register 21 temporarily storesvarious data necessary for operation of the memory cell array 11. Thestatus register 21 includes, for example, an SRAM.

1-1. Configuration of Memory Cell Array 11

FIG. 2 is a block diagram of the memory cell array 11. The memory cellarray 11 includes multiple blocks BLK (BLK0, BLK1, BLK2, etc.). Each ofthe multiple blocks BLK includes multiple string units SU (SU0, SU1,SU2, etc.). Each of the multiple string units SU includes multiple NANDstrings 22. The number of blocks in the memory cell array 11, the numberof string units in one block BLK, and the number of NAND strings in onestring unit SU, can be arbitrarily set.

FIG. 3 is a circuit diagram of one block BLK which is included in thememory cell array 11. Each of the multiple NAND strings 22 includesmultiple memory cell transistors MT, and two selection transistors ST1and ST2. In the present disclosure, the memory cell transistor may alsobe referred to as “a memory cell” or “a cell.” FIG. 3 illustrates aconfiguration example in which the NAND string 22 includes eight memorycell transistors MT (MT0 to MT7), but the number of the memory celltransistors MT included in the NAND string 22 can be arbitrarily set.The memory cell transistor MT includes a control gate and a gate stackincluding a charge storage layer, and stores data in a nonvolatilemanner. The memory cell transistor MT may be configured to store one bitdata (two values), and may be configured to store data (or three valuesor more) more than two bits.

The multiple memory cell transistors MT are arranged between theselection transistors ST1 and ST2 such that a current path is connectedin series. A current path of the memory cell transistor MT on one end ofthe series connection is connected to one end of a current path of theselection transistor ST1, and a current path of the memory celltransistor MT on the other end of the series connection is connected toone end of a current path of the selection transistor ST2.

Gates of the multiple selection transistors ST1 included in the stringunits SU0 are connected in common to a selection gate line SGD0, and inthe same manner, the string units SU1 to SU3 are respectively connectedto selection gate lines SGD1 to SGD3. Gates of the multiple selectiontransistors ST2 included in the string units SU0 are connected in commonto a selection gate line SGS0, and in the same manner, the string unitsSU1 to SU3 are respectively connected to selection gate lines SGS1 toSGS3. Gates of the multiple selection transistors ST2 in the same blockBLK may be connected in common to the same selection gate line SGS.Control gates of the memory cell transistors MT0 to MT7 in the sameblock BLK are respectively connected to word lines WL0 to WL7.

The other ends of current paths of the selection transistors ST1 of themultiple NAND strings 22 in the same column, among the NAND strings 22which are arranged in a matrix in the memory cell array 11, areconnected in common to one of the bit lines BL0 to BL(m−1). Here, “m” isan integer equal to or greater than “1”. That is, one bit line BL isconnected to the NAND strings 22 in the same column in the multipleblocks BLK. The other ends of current paths of the multiple selectiontransistors ST2 which are included in the same block BLK are connectedin common to a source line SL. The source line SL is connected in commonto the multiple NAND strings 22 in, for example, the multiple blocks.

Data of the multiple memory cell transistors MT in the same block BLK ismay be collectively erased. Reading and writing of data aresimultaneously performed with respect to the multiple memory celltransistors MT which are connected in common to one word line WL that isarranged in one block BLK. This data unit is called a page.

FIG. 4 is a cross-sectional view of a part of the block BLK. Themultiple NAND strings 22 are formed on a P-type well region 30. That is,a wiring layer 31 of, for example, four layers (which functions as theselection gate line SGS), a wiring layer 32 of eight layers (whichfunctions as the word lines WL0 to WL7), and a wiring layer 33 of fourlayers (which functions as the selection gate line SGD) are sequentiallystacked on the P-type well region 30. Insulating films (not specificallyillustrated) are formed between the stacked wiring layers.

In addition, memory holes 34 extending to the well region 30 bypenetrating through the wiring layers 31, 32, and 33 are formed. Asemiconductor layer 35 of a pillar shape is formed in the memory hole34. A gate insulating film 36, a charge storage layer (insulating film)37, and a block insulating film are sequentially formed on a sidesurface of the semiconductor layer 35. The memory cell transistors MTand the selection transistors ST1 and ST2 are formed with these filmsand layers. The semiconductor layers 35 function as the current paths ofthe NAND strings 22, and are regions in which channels of eachtransistor are formed. An upper end of the semiconductor layer 35 isconnected to a metal wiring layer 39 which functions as the bit line BL.

An n⁺-type impurity diffusion layer 40 is formed in a surface region ofthe well region 30. A contact plug 41 is formed on the diffusion layer40. The contact plug 41 is connected to a metal wiring layer 42 whichfunctions as the source line SL. Furthermore, a p⁺-type impuritydiffusion layer 43 is formed in a surface region of the well region 30.A contact plug 44 is formed on the diffusion layer 43, and the contactplug 44 is connected to a metal wiring layer 45 which functions as awell wire CPWELL. The well wire CPWELL is used for applying a potentialto the semiconductor layer 35 through the well region 30.

The above configuration is can be repeatedly arranged along a depthdirection in to and out of the page on which FIG. 4 is illustrated, andthe string units SU are formed by the multiple NAND strings 22 which aredisposed along the depth direction.

The NAND string 22 may include dummy cell transistors. FIG. 5 is acircuit diagram illustrating the dummy cell transistors.

For example, two dummy cell transistors DT0 and DT1 are connected inseries between the selection transistor ST2 and the memory celltransistor MT0. For example, two dummy cell transistors DT2 and DT3 areconnected in series between the memory cell transistor MT7 and theselection transistor ST1. Dummy word lines DWL0 to DWL3 are respectivelyconnected to gates of the dummy cell transistors DT0 to DT3. Aconfiguration of the dummy cell transistor is the same as that of thememory cell transistor. The dummy cell transistor is not used forstoring data, and has a function of reducing read disturbances occurringin the memory cell transistor or the selection transistor, during awrite pulse application operation or an erasure pulse applicationoperation.

A configuration of the memory cell array is described in, for example,U.S. patent application Ser. No. 12/407,403 filed on Mar. 19, 2009 andentitled “THREE DIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY”.In addition, the configuration is described in U.S. patent applicationSer. No. 12/406,524 filed on Mar. 18, 2009 and entitled “THREEDIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY”, U.S. patentapplication Ser. No. 12/679,991 filed on Mar. 25, 2010 and entitled“NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURINGTHE SAME”, and U.S. patent application Ser. No. 12/532,030 filed on Mar.23, 2009 and entitled “SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURINGSAME”. All the patent applications are employed in the presentdisclosure by reference.

In addition, erasing of data can be performed by a block BLK unit or aunit smaller than the block BLK. An erasing method is described in, forexample, U.S. patent application Ser. No. 13/235,389 filed on Sep. 18,2011 and entitled “NONVOLATILE SEMICONDUCTOR MEMORY DEVICE”, U.S. patentapplication Ser. No. 12/694,690 filed on Jan. 27, 2010 and entitled“NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE”, and U.S. patent applicationSer. No. 13/483,610 filed on May 30, 2012 and entitled “NONVOLATILESEMICONDUCTOR MEMORY DEVICE AND DATA ERASE METHOD THEREOF”. All thepatent applications are employed in the present disclosure by reference.

1-2. Configurations of Sense Amplification Unit 14 and Data Cache 15

FIG. 6 is a block diagram of the sense amplification unit 14 and thedata cache 15.

The data cache 15 includes, for example, three caches ADL, BDL, and XDL.The number of caches included in the data cache 15 can be appropriatelyset according to the number of bits which are stored in one memory cell.

The caches ADL, BDL, and XDL can temporarily store data. The cache XDLis arranged in the location closest to an IO pad (circuit), and isconnected to the input and output circuit 18 through a bidirectional busYIO. The cache XDL is connected to the sense amplification unit 14 andalso the caches ADL and BDL through an internal bus LBUS. Write data orthe like stored in the cache XDL can be copied and transmitted to thecaches ADL and BDL through the internal bus LBUS. The cache XDL is notlimited with respect to physical locations of the caches ADL and BDL,and may be arranged accordingly.

The sense amplification unit (S/A) 14 includes a cache (senseamplification cache) SDL for storing read results, when reading data.Read data or the like stored in the cache SDL can be copied andtransmitted to the caches ADL and BDL through the internal bus LBUS.

The sense amplification unit 14 is connected to the memory cell throughthe bit line BL, and has a capacity corresponding only to the number ofunits (for example, 32 kilobytes) which can be simultaneously read.Specifically, in this example, when 32 kilobytes can be simultaneouslyread, the bit lines BL are available for 32768 bytes (that is, 262144bits), and the caches SDL, ADL, BDL, and XDL are also provided in thesame storage capacity as those values.

1-3. Specific Configuration of Sense Amplification Unit 14

FIG. 7 is a circuit diagram of the sense amplification unit 14.

The sense amplification unit 14 includes multiple N channel MOStransistors (hereinafter, referred to as NMOS) 51 to 57, multiple Pchannel MOS transistors (hereinafter, referred to as PMOS) 58 and 59,the transfer gates 60 and 61, the cache (data latch circuit) SDL, and acapacitor 63. The cache SDL includes, for example, clocked invertercircuits 62 a and 62 b.

One end of a current path of the NMOS 51 is connected to a node to whicha power supply voltage Vdd is supplied. The other end of the currentpath of the NMOS 51 is grounded through the transfer gate 60, the NMOS54, and transfer gate 61 (“grounded” here means connected to a node towhich a voltage Vss is supplied, the voltage Vss may be, for example, aground voltage (0 V)). One end of a current path of the NMOS 55 isconnected to a connection node between the NMOS 54 and the transfer gate61. The other end of the NMOS 55 is connected to the bit line BL whichis arranged in the memory cell array 11. The NMOS 51 is connected inparallel to a series circuit of the NMOS 52 and the NMOS 53.

One end of a current path of the PMOS 58 is connected to a node to whichthe power supply voltage Vdd is supplied. The other end of a currentpath of the PMOS 58 is connected to an input terminal of the invertercircuit 62 a which configures the cache SDL through the PMOS 59, and isgrounded through the NMOS 56. An input terminal of the clocked invertercircuit 62 b, which is cross-coupled to the inverter circuit 62 a, isconnected to the internal bus LBUS through the NMOS 57. A gate of thePMOS 59 is connected to a connection node between the NMOS 52 and theNMOS 53, and one terminal of the capacitor 63 through a sense node SEN.A clock signal CLK is supplied to the other terminal of the capacitor63.

The controller 20 supplies the sense amplification unit 14 with variouscontrol signals (for example, signals BLX, BLC, BLS, HLL, XXL, STB, RST,and NCO) as further described below.

The signal BLX is supplied to a gate of the NMOS 51. A signal LAT of anoutput terminal of the inverter circuit 62 a, which configures the cacheSDL, is supplied to a gate of the NMOS transistor in the transfer gate60. A signal INV of an input terminal of the inverter circuit 62 a issupplied to a gate of the PMOS transistor in the transfer gate 60. Thesignal BLC is supplied to a gate of the NMOS 54. The signal BLS issupplied to a gate of the NMOS 55.

The signal INV is also supplied to a gate of the NMOS transistor in thetransfer gate 61. The signal LAT is also supplied to a gate of the PMOStransistor in the transfer gate 61.

The signal HLL is supplied to a gate of the NMOS 52. The signal XXL issupplied to a gate of the NMOS 53. The signal STB is supplied to a gateof the PMOS 58. The reset signal RST is supplied to a gate of the NMOS56. The signal NCO is supplied to a gate of the NMOS 57.

Next, a write operation, a read operation, and a write verificationoperation of the sense amplification unit 14 will be schematicallydescribed.

(Write Operation)

When data is written to the memory cell, the controller 20 generates thecontrol signals as follows. First, the controller 20 sets the signal STBgo to a high level (hereinafter, referred to as an “H” level), sets thereset signal RST to an “H” level once, and resets the cache SDL.Thereby, the signal LAT of the cache SDL becomes an “H” level, and thesignal INV becomes a low level (hereinafter, referred to as an “L”level).

Thereafter, the controller 20 sets the signal NCO to an “H” level. Datais taken into the cache SDL from the internal bus LBUS. When the data isin an “L” level (“0”) indicating write, the signal LAT becomes an “L”level, and the signal INV becomes an “H” level. In addition, when thedata is in an “H” level (“1”) indicating non-write, data of the cacheSDL does not change, and the signal LAT is maintained as the signal LATis in an “H” level and the signal INV is in an “L” level.

Subsequently, the controller 20 makes the signals BLX, BLC, and BLS goto an “H” level. Then, in a case of write (that is, when the signal LATof the cache SDL is in an “L” level and the signal INV is in an “H”level), the transfer gate 60 is turned off and the transfer gate 61 isturned on, whereby a voltage of the bit line BL becomes the voltage Vss.In this state, when a voltage of the word line becomes the programvoltage Vpgm, data is written to the memory cell.

Meanwhile, in a case of non-write (that is, when the signal LAT of thecache SDL is in an “H” level and the signal INV is in an “L” level), thetransfer gate 60 is turned on and the transfer gate 61 is turned off,whereby the bit line BL is electrically charged with the power supplyvoltage Vdd. Here, when the voltage of the word line is the programvoltage Vpgm, a channel of the memory cell is raised to a high voltage,and thus the data is not written to the memory cell. Read Operation andWrite Verification Operation

When data is read from the memory cell, the controller 20 generates thecontrol signals as follows. First, the controller 20 makes the resetsignal RST once go to an “H” level and resets the cache SDL. Thereby,the signal LAT of the cache SDL goes to an “H” level, and the signal INVgoes to a low level.

Thereafter, the controller 20 sets the signal BLS, BLC, BLX, HLL, andXXL to a predetermined voltage. Thereby, the bit line BL is electricallycharged and the node SEN of the capacitor 63 is electrically chargedwith the power supply voltage Vdd. Here, when a threshold voltage of thememory cell is higher than a read level, the memory cell is turned off,and the bit line BL is maintained in an “H” level. That is, the node SENis maintained in an “H” level. In addition, when the threshold voltageof the memory cell is lower than the read level, the memory cell isturned on, and electric charges of the bit line BL are discharged.Accordingly, the voltage of the bit line BL goes to an “L” level.Thereby, the node SEN also goes to an “L” level.

Subsequently, the controller 20 makes the signal STB go to an “L” level.Then, when the memory cell is turned on, the node SEN goes to an “L”level, and thus, the PMOS 59 is turned on. Thereby, the signal INV ofthe cache SDL goes to an “H” level and the signal LAT goes to an “L”level. Meanwhile, when the memory cell is turned off, the node SEN goesto an “H” level, and thus, the PMOS 59 is turned off. Thereby, thesignal INV of the cache SDL goes to an “L” level and the signal LAT goesto an “H” level.

Thereafter, the controller 20 sets the signal NCO to an “H” level. Then,the NMOS 57 is turned on and the data of the cache SDL is transmitted tothe internal bus LBUS.

In addition, after the write operation, a write verification operationof verifying the threshold voltage of the memory cell is performed. Thewrite verification operation is performed in the same manner as the readoperation.

1-4. Configuration of Row Decoder 12

Next, a configuration of the row decoder 12 will be described. FIG. 8 isa circuit diagram of the row decoder 12. The row decoder 12 includes ablock decoder 70 and multiple transfer gates (e.g., 71 to 75).

The block decoder 70 includes a NAND gate 70A and an inverter circuit70B. A first input terminal (active high) of the NAND gate 70A receivesa signal RDECAD, and a second input terminal (active low) of the NANDgate 70A receives a signal BADBLK.

The signal RDECAD goes to an “H” level when a corresponding block is aselected block, and goes to a “L” level when the corresponding block isan non-selected block. The signal BADBLK goes to an “H” level when thecorresponding block is a failed block (bad block).

The NAND gate 70A outputs a signal BLKSEL. An output terminal of theNAND gate 70A is connected to an input terminal of the inverter circuit70B. The inverter circuit 70B outputs a signal BLKSELn.

The row decoder 12 includes transfer gates 71 (71-0 to 71-3), 72 (72-0to 72-3), 73, 74 (74-0 to 74-3), 75, and 76. Each of the transfer gatesincludes an N channel MOS transistor of a high breakdown voltage.

The MOS transistors 71 and 72 transmit voltages to the selection gatelines SGD. One terminal of a current path of each of the MOS transistors71-0 to 71-3 is connected to each of the selection gate lines SGD0 toSGD3, the other terminal of each of the MOS transistors is connected toeach of the signal lines SGDI0 to SGDI3, and the signal BLKSEL issupplied in common to gates of the MOS transistors.

One terminal of the current path of each of the MOS transistors 72-0 to72-3 is connected to each of the selection gate lines SGD0 to SGD3, theother terminal of each of the MOS transistors is connected in common tothe signal line USGDI, and the signal BLKSELn is supplied in common togates of the MOS transistors.

The MOS transistors 73 transmit voltages to the word lines WL. Oneterminal of a current path of each of the MOS transistors 72 isconnected to a corresponding word line WL, the other terminals thereofare connected to corresponding signal lines CG, and the signal BLKSEL issupplied to gates of the MOS transistors. FIG. 8 illustrates only oneMOS transistor 73, but the MOS transistors 73 are provided by the numberof the word lines WL.

The MOS transistors 74 transmit voltages to selection gate lines SGS.One terminal of a current path of each of the MOS transistors 74-0 to74-3 is connected to the selection gate lines SGS0 to SGS3, the otherterminals thereof are respectively connected to signal lines SGSI0 toSGSI3, and the signal BLKSEL is supplied in common to gates thereof.

The MOS transistors 75 and 76 transmit voltages to a selection gate lineSGSB. While not being illustrated in FIG. 3, the selection gate lineSGSB (and selection transistors connected to this) is arranged on alowermost layer of the NAND string 22, reduces resistance on a sourceside of the NAND string 22, and transmits a predetermined voltage to annon-selected block.

The MOS transistor 75 has one terminal of a current path connected tothe selection gate line SGSB, the other terminal connected to a signalline SGSBI, and a gate receiving the signal BLKSEL. The MOS transistor76 has one terminal of a current path connected to the selection gateline SGSB, the other terminal connected to a signal line USGSI, and agate receiving the signal BLKSELn.

The selection gate line SGSB is connected to a lowermost selectiontransistor among the multiple selection transistors on the source side.The selection gate line SGSB (and selection transistors connected tothis) has a function of reducing resistance of the NAND string 22(specifically, the semiconductor layer 35 of a pillar shape). In theselected block, the selection transistor connected to the selection gateline SGSB is turned on. Voltage setting of the NAND string 22 which isin the write operation, the read operation, and the erasure operation,is performed by using the selection gate lines SGS.

The signal lines SGDI0 to SGDI3, USGDI, CG, SGSI0 TO SGSI3, SGSBI, andUSGSI are connected to the core driver 16. 2. Operation of NAND TypeFlash Memory 10

First, a block selecting operation will be described. FIG. 9 is aschematic diagram illustrating a block selecting operation.

In the selected block, the MOS transistors 71, 73, 74, and 75 are turnedon, and the MOS transistors 72 and 76 are turned off. Hence, in theselected block, the selection gate lines SGD are connected to the signallines SGDI, the selection gate lines SGS are connected to the signallines SGSI, the selection gate line SGSB is connected to the signal lineSGSBI, and the word lines WL are connected to the signal lines CG.

Furthermore, the three-dimensional stacked NAND type flash memory 10 canselect one string unit in the selected block. As illustrated in FIG. 9,as an example, when only the string units SU0 in the selected block areselected, the core driver 16 applies a voltage SGD_SEL to the selectiongate line SGD0 so as to turn on the selection transistor ST1, andapplies a voltage SGS_SEL to the selection gate lines SGS0 and SGSB soas to turn on the selection transistor ST2. In addition, the core driver16 applies a voltage SGD_USEL to the selection gate lines SGD1 to SGD3so as to turn off the selection transistor ST1, and applies a voltageSGS_USEL to the selection gate lines SGS1 to SGS3 so as to turn off theselection transistor ST2. A voltage VREAD or a voltage VCGRV which willbe described below is applied to the word line WL.

Meanwhile, in the non-selected blocks, the MOS transistors 71, 73, 74,and 75 are turned off, and the MOS transistors 72 and 76 are turned on.Hence, in the non-selected block, the selection gate lines SGD isconnected to the signal line USGDI, and the selection gate line SGSB isconnected to the signal line USGSI. The word line WL and the selectiongate lines SGS enter a floating state. The core driver 16 applies thevoltage USGD to the selection gate lines SGD0 to SGD3 so as to turn offthe selection transistor ST1, and applies the voltage USGS to theselection gate line SGSB so as to turn off the selection transistor ST2.

As described above, the selection gate lines SGS which are connected tothe multiple selection transistors ST2 in the same block BLK may becommon. In this case, the selection gate lines SGS<3:0> are wired as acommon selection gate lines SGS.

In this manner, the three-dimensional stacked NAND type flash memoryincludes selected NAND strings and non-selected NAND strings in theselected block. For this reason, unique read disturbances, which doesnot occur in a two-dimensional (planar) NAND type flash memory, occurs.The present embodiment is intended to prevent or limit the readdisturbance caused by hot carriers which are injected into a memory cell(or dummy cell) adjacent to the selection gate lines SGD in thenon-selected NAND strings.

Hereinafter, the read operations will be separately described by usingan all-bit-line (ABL) method and a bit line shield method. The ABLmethod is a method of simultaneously reading data from all bit lines.The bit line shield method is a method of independently reading datafrom the even-numbered bit lines and the odd-numbered bit lines. The bitlines which are not read targets in the bit line shield method are setto the voltage Vss and function as shield lines.

2-1. Operation of ABL Method

FIG. 10 is a timing chart illustrating a read operation of the NAND typeflash memory 10 according to the ABL method. In FIG. 10, a periodbetween points of time t1 and t2 is a read preparation period forreducing a raised channel voltage, a period between points of time t2and t3 is a precharge period, and a period between points of time t3 andt4 is a read period for determining data of the memory cell.

At the point of time t1, the controller 20 applies the voltage Vss(e.g., 0 V) or a voltage VSRC to the bit line BL, and applies thevoltage VSRC to the source line. The voltage VSRC is has a valueaccording to the following relationship: Vss<VSRC<Vdd. The controller 20applies a read voltage VCGRV to the selected word lines WL, and appliesa read pass voltage VREAD to non-selected word lines WL. The readvoltage VCGRV is a threshold voltage of the memory cell of a readtarget, that is, a voltage for determining data of the memory cell. Theread pass voltage VREAD turns on the memory cell regardless of datastored in the memory cell. In FIG. 10, a voltage of the selected wordline WL temporarily becomes higher than the read voltage VCGRV bycoupling of the selected word line WL and the non-selected word line WL.

In addition, the controller 20 applies a voltage VSG to selected SGD(selected selection gate lines SGD), non-selected SGD (non-selectedselection gate lines SGD), selected SGS (selected selection gate linesSGS), non-selected SGS (non-selected selection gate lines SGS). Thevoltage VSG turns on the selection transistors ST1 and ST2, and is, forexample, approximately 6V. That is, in the present embodiment, theselection transistors ST1 are turned on in the non-selected NANDstrings.

In the non-selected NAND strings of the selected block, when theselection transistor ST1 is in an off state when the memory cellconnected to the selected word line WL is in a cut-off state, a channelof a drain side is raised when voltages of the non-selected word linesWL are raised to the read pass voltage VREAD, and the threshold voltageof the memory cell adjacent to the selected word line WL is increased byread disturbance caused by injected hot carriers. Hence, to decrease avoltage of the raised channel, the selection transistor ST1 of thenon-selected NAND strings is turned on when the voltages of thenon-selected word lines WL are increased to the read pass voltage VREAD.Accordingly, it is possible to prevent the read disturbance, caused bythe hot carriers which are injected into the memory cell adjacent to theselected word line WL, from occurring.

In the non-selected blocks, the voltage Vss or the voltage VSRC isapplied to the selection gate lines SGD and SGS.

Subsequently, at the point of time t2, the controller 20 applies aprecharge voltage Vpre to the bit line BL. The precharge voltage Vpreprecharges the bit line BL before data is read from the memory cell, andis, for example, approximately VSRC+0.5 V.

Subsequently, the controller 20 applies the voltage VSRC to thenon-selected SGD. Thereby, the selection transistors ST1 in thenon-selected NAND strings are turned off. In this case, the non-selectedSGD is set as the voltage VSRC at the same time as the source line SL,and thus, the selection transistors ST1 are turned off and a voltagedifference between the adjacent word lines can be reduced.

The voltage which is applied to the non-selected SGD at the point oftime t2 is not limited to the voltage VSRC in the same manner as thesource line, and may be a voltage which turns off the selectiontransistor ST1. That is, the voltage which is applied to thenon-selected SGD at time t2 is higher than the voltage Vss, and may beequal to or lower than a voltage which is obtained by adding thethreshold voltage of the selection transistor ST1 to the voltage VSRC ofthe source line.

Subsequently, at the point of time t3, the sense amplification unit 14determines a current of the bit line thereby reading the data of thememory cell. Thereafter, at the point of time t4, voltages of variouswires are reset.

During the period between the points of time t1 and t2, all the bitlines BL may enter a floating state. Even in this case, the sameoperation as above can be performed, and power consumption can bereduced, as compared to a case where the aforementioned bit line BL isset as the voltage VSRC.

Comparative Example

FIG. 11 is a timing chart illustrating the read operation according to acomparative example. In the comparative example, at time t2, thecontroller 20 applies the voltage Vss (e.g., ground voltage) to thenon-selected SGD. Thereby, the selection transistors ST1 in thenon-selected NAND strings are turned off. In the comparative example, avoltage difference between a voltage of the non-selected SGD and avoltage of the word line adjacent thereto is increased.

FIGS. 12A and 12B are schematic energy band diagrams illustrating theread disturbance. FIG. 12A is the comparative example, and FIG. 12Billustrates the present embodiment.

For example, a threshold voltage Vt of the memory cell is Vt=2 V, athreshold voltage Vt of the selection transistor ST1 is Vt=3.5 V,VREAD=8 V, VSRC=1 V, and Vpre=1.5 V (or 1 V). For example, the channelis raised to approximately 4 V by the read pass voltage VREAD which isapplied to the non-selected word lines WL6 and WL7.

In the comparative example, 0 V is applied to the selection gate linesSGD, and the channel of the selection transistor ST1 is approximately−3.5 V. In contrast to this, in the present embodiment, the voltage VSRC(=1 V) is applied to the selection gate lines SGD, and the channel ofthe selection transistor ST1 is approximately −2.5 V. Thereby, in thepresent embodiment, a voltage difference of the channel between theselection gate line SGD and the word line WL7 adjacent thereto isreduced, and the read disturbance is reduced.

2-2. Operation of Bit Line Shield Method

FIG. 13 is a timing chart illustrating the read operation of the NANDtype flash memory 10 according to a bit line shield method. In the bitline shield method, the voltage Vss is applied to the odd-numbered bitlines when data is read from the even-numbered bit lines. Similarly, thevoltage Vss is applied to the even-numbered bit lines when the data isread from the odd-numbered bit lines. Hereinafter, only the operationdifferent from that of the ABL method will be described.

At time t2, the controller 20 applies the voltage VSRC to the selectedSGS and the non-selected SGS. Then, the selection transistors ST2 in theselected NAND strings and the non-selected NAND strings are turned off.Thereby, a current does not flow through the NAND strings, and the bitlines BL can be reliably charged by the precharge voltage Vpre.

A voltage which is applied to the selection gate lines SGS at time t2 isnot limited to the voltage VSRC in the same manner as the source lineand may be a voltage which cuts off the selection transistors ST2. Thatis, the voltage which is applied to the selection gate lines SGS at thepoint of time t2 is higher than the voltage Vss, and maybe equal to orlower than a voltage which is obtained by adding the threshold voltageof the selection transistor ST2 to the voltage VSRC of the source line.

At time t3, the controller 20 applies the voltage VSG to the selectiongate lines SGS. Thereafter, the sense amplification unit 14 determinesthe voltage of the bit line, thereby reading the data of the memorycell.

Comparison Example

FIG. 14 is a timing chart illustrating the read operation according tothe comparative example. In the comparative example, at time t2, thecontroller 20 applies the voltage Vss to the non-selected SGD, theselected SGS, and the non-selected SGS. Thereby, the selectiontransistors ST1 in the non-selected NAND strings are turned off. Inaddition, the selection transistors ST2 in the selected NAND strings andthe non-selected NAND strings are turned off.

In the same manner as in the ABL method, in the comparative example avoltage difference between the non-selected SGD and the word lineadjacent thereto is increased. However, in the present embodiment, avoltage difference of the channel between the selection gate line SGDand the word line WL adjacent thereto is reduced, and the readdisturbance is reduced.

3. Effects of Embodiments

For example, it is assumed that there is arranged a dummy cell adjacentto the selection gate line SGD. Since the number of times that the readdisturbance occurs in the dummy cell adjacent to the selection gatelines SGD is as much as the number of the word lines WL compared to thenormal memory cells, disturbance occurs in the dummy cell, even thoughdisturbance of the normal memory cell is within an allowable range. Whena threshold voltage of the dummy cell increases to a level which affectsa cell current (current flowing through the NAND string when data isread), this threshold voltage affects the read operation.

In the present embodiment, during a negative sense operation of biasingthe source line SL to the positive voltage VSRC of approximately 1 V andnot the voltage Vss, the voltage VSRC which is equal to a voltage thatis applied to, for example, the source line SL is applied to theselection gate lines SGD of the non-selected NAND strings. Thereby, avoltage difference of a channel between the selection gate line SGD anda dummy word line WL adjacent thereto is reduced. As a result, it ispossible to prevent the read disturbance caused by the hot carrierswhich are injected into the dummy cell (or memory cell) adjacent to theselection gate lines SGD from occurring.

Modification Example

When one memory cell transistor MT stores two bit data, a thresholdvoltage thereof is set to any one of four levels according to the storeddata. When the four levels are referred to as an erasure level, anA-level, a B-level, and a C-level in an ascending order, a voltage whichis applied to a selected word line at the time of an A-level readoperation is, for example, between 0 V and 0.55 V. The voltage is notlimited to this, and may be between 0.1 V and 0.24 V, between 0.21 V and0.31 V, between 0.31 V and 0.4 V, between 0.4 V and 0.5 V, or between0.5 V and 0.55 V. A voltage which is applied to a selected word line atthe time of a B-level read operation is, for example, between 1.5 V and2.3 V. The voltage is not limited to this, and may be between 1.65 V and1.8 V, between 1.8 V and 1.95 V, between 1.95 V and 2.1 V, or between2.1 V and 2.3 V. A voltage which is applied to a selected word line atthe time of a C-level read operation is, for example, between 3.0 V and4.0 V. The voltage is not limited to this, and may be between 3.0 V and3.2 V, between 3.2 V and 3.4 V, between 3.4 V and 3.5 V, between 3.5 Vand 3.6 V, or between 3.6 V and 4.0 V. Time (tR) of the read operationmay be, for example, between 25 μs and 38 μs, between 38 μs and 70 μs,or between 70 μs and 80 μs.

The write operation includes a program and program verification process.In the write operation, a voltage which is first applied to the wordline that is selected at the time of programming is, for example,between 13.7 V and 14.3 V. The voltage is not limited to this, and maybe, for example, between 13.7 V and 14.0 V, or between 14.0 V and 14.6V. A voltage which is first applied to the word line that is selectedwhen data is written to odd-numbered word lines may be changed with avoltage which is first applied to the word line that is selected whendata is written to even-numbered word lines. When the program operationis performed according to an incremental step pulse program (ISPP)method, it is recommended that, for example, approximately 0.5 V is usedas a step-up voltage increment. A voltage which is applied to anon-selected word line may be, for example, between 6.0 V and 7.3 V. Thevoltage is not limited to this, and may be, for example, between 7.3 Vand 8.4 V, or may be equal to or lower than 6.0 V. A pass voltage whichis applied may be changed depending on whether the non-selected wordlines are odd-numbered word lines or even-numbered word lines. Time(tProg) of the write operation may be, for example, between 1,700 μs and1,800 μs, between 1,800 μs and 1,900 μs, or between 1,900 μs and 2,000μs.

In the erasure operation, a voltage that is first applied to a well,which is formed on a semiconductor substrate and on which a memory cellis arranged, is, for example, between 12 V and 13.6 V. The voltage isnot limited to this case, and may be, for example, between 13.6 V and14.8 V, between 14.8 V and 19.0 V, between 19.0 V and 19.8 V, or between19.8 V and 21 V. Time (tErase) of the erasure operation may be, forexample, between 3,000 μs and 4,000 μs, between 4,000 μs and 5,000 μs,or between 5,000 μs and 9,000 μs.

In addition, the memory cell may have, for example, the followingstructure. The memory cell includes a charge storage layer which isarranged on the semiconductor substrate such as a silicon substratethrough a tunnel insulating film whose thickness is between 4 nm and 10nm. The charge storage layer can have a stack structure of an insulatingfilm such as a silicon nitride (SiN) film with a thickness of 2 nm to 3nm or a silicon oxide (SiON) film, and a polysilicon (Poly-Si) film witha thickness of 3 nm to 8 nm. A metal such as ruthenium (Ru) may be addedto the polysilicon film. The memory cell includes an insulating filmformed on the charge storage layer. The insulating film has a siliconoxide (SiO₂) film with a thickness of 4 nm to 10 nm which is interposedbetween a lower layer High-k film with a thickness of 3 nm to 10 nm andan upper layer High-k film with a thickness of 3 nm to 10 nm. Hafniumoxide (HfO) or the like can be used as a material of the high-k films.In addition, the thickness of the silicon oxide film may be greater thanthe thickness of the high-k film. A control electrode with a thicknessof 30 nm to 70 nm is formed on the insulating film through a materialfor work function adjustment with a thickness of 3 nm to 10 nm. Here,the film for work function adjustment is a metal oxide film such astantalum oxide (TaO), a metal nitride film such as tantalum nitride(TaN), or the like. Tungsten (W) or the like can be used as the controlelectrode. An air gap can be arranged between the memory cells.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein maybe made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor memory device, comprising: amemory cell array having a plurality of memory strings disposed incolumns, each memory string having a first selection transistor, asecond selection transistor, and a memory cell connected between thefirst selection transistor and second selection transistor, the memorycell being capable of holding data; a word line connected to a gate ofeach memory cell of the memory cell array; a plurality of bit lines,each connected to first selection transistors included in acorresponding column of memory string; a plurality of first selectiongate lines, each connected to a gate of first selection transistorsincluded in a corresponding row of the memory cell strings; and acontroller configured to read the data stored in the memory cellsincluded in a target row of the memory strings by performing a readoperation, the read operation including: in a first period, applying afirst voltage to the first selection gate lines, in a second periodafter the first period, applying a second voltage to the first selectiongate lines to turn on the first selection transistors, the secondvoltage being higher than the first voltage, and in a third period afterthe second period, applying a third voltage to a subset of the firstselection gate lines corresponding to a non-target row of the memorystrings to turn off the first selection transistors included in thenon-target row of the memory strings, while maintaining the secondvoltage being applied to a different subset of the first selection gatelines corresponding to the target row of the memory strings, the thirdvoltage being higher than the first voltage and lower than the secondvoltage.
 2. The device according to claim 1, further comprising: asource line that is connected to all the second select transistorsincluded in the memory cell array; a plurality of second selection gatelines, each connected to a gate of second selection transistors in acorresponding row of the memory strings, wherein the read operationfurther includes: in the first period, applying the first voltage to thesecond selection gate lines, in the second period, applying the secondvoltage to the second selection gate lines, and in the third period,maintaining the second voltage on the second selection gate lines. 3.The device according to claim 2, wherein the plurality of secondselection gate lines are connected to each other.
 4. The deviceaccording to claim 3, wherein the read operation further includes:applying the third voltage to the source line from the first period tothe third period.
 5. The device according to claim 4, wherein the readoperation further includes: applying the first voltage to the bit linesin the first period, maintaining the first voltage on the bit lines inthe second period, and applying a fourth voltage to the bit lines in thethird period, the fourth voltage being higher than the third voltage. 6.The device according to claim 4, wherein the read operation furtherincludes: applying the first voltage to the bit lines in the firstperiod, applying the third voltage to the bit lines in the secondperiod, and applying a fourth voltage to the bit lines in the thirdperiod, the fourth voltage being higher than the third voltage.
 7. Thedevice according to claim 1, wherein each of the memory strings includesa first memory cell, a second memory cell, and a third memory cellconnected in series, and a first word line is connected to gates of allfirst memory cells included in the memory cell array, a second word lineis connected to gates of all the second memory cells included in thememory cell array, and a third word line is connected to gates of allthe third memory cells included in the memory cell array.
 8. The deviceaccording to claim 7, wherein when the controller reads the data storedin the second memory cells included in the target row of the memorystrings, the read operation further includes: from a start of the secondperiod to the third period, applying a fifth voltage to the first wordline and the third word line, and applying a sixth voltage to the secondword line, the fifth voltage being higher than the second voltage, thesixth voltage being lower than the fifth voltage.
 9. A semiconductormemory device, comprising: a memory cell array including: a first memorystring including a first selection transistor, a second selectiontransistor, and a first memory cell connected between the firstselection transistor and the second selection transistor, the firstmemory cell being capable of storing data; and a second memory stringincluding a third selection transistor, a fourth selection transistor,and a second memory cell connected between the third selectiontransistor and the fourth selection transistor, the second memory cellbeing capable of storing data; a word line connected to gates of thefirst memory cell and the second memory cell; a bit line connected tothe first selection transistor and the third selection transistor; afirst selection gate line connected to a gate of the first selectiontransistor; a second selection gate line connected to a gate of thethird selection transistor; and a controller configured to read the datastored in the first memory cell by performing a read operation, the readoperation including: in a first period, applying a first voltage to thefirst selection gate line and the second selection gate line, in asecond period after the first period, applying a second voltage to thefirst selection gate line and the second selection gate line to turn onthe first selection transistor and the third selection transistor, thesecond voltage being higher than the first voltage, and in a thirdperiod after the second period, applying a third voltage (to the secondselection gate line to turn off the third selection transistor, whilemaintaining the second voltage applied to the first selection gate line,the third voltage being higher than the first voltage and lower than thesecond voltage.
 10. The device according to claim 9, further comprising:a third selection gate line connected to a gate of the second selectiontransistor; a fourth selection gate line connected to a gate of thefourth selection transistor; and a source line connected to the secondselection transistor and the fourth selection transistor; wherein theread operation further includes: in the first period, applying the firstvoltage to the third selection gate line and the fourth selection gateline, in the second period, applying the second voltage to the thirdselection gate line and the fourth selection gate line, and in the thirdperiod, maintaining the second voltage to be applied to the thirdselection gate line and the fourth selection gate line.
 11. The deviceaccording to claim 10, wherein the third selection gate line and thefourth selection gate line are connected to each other.
 12. The deviceaccording to claim 11, wherein the read operation further includes:applying the third voltage to the source line from the first period tothe third period.
 13. The device according to claim 12, wherein the readoperation further includes: applying the first voltage to the bit linein the first period, maintaining the first voltage applied to the bitline in the second period, and applying a fourth voltage to the bit linein the third period, the fourth voltage being higher than the thirdvoltage.
 14. The device according to claim 12, wherein the readoperation further includes: applying the first voltage to the bit linein the first period, applying the third voltage to the bit line in thesecond period, and applying a fourth voltage to the bit line in thethird period, the fourth voltage being higher than the third voltage.